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triquint semiconductor texas: phone (972)994-8 465 fax (972)994 8504 web: www.triquint.com product data sheet august 5, 2008 1 27 - 31 ghz 1w power amplifier TGA4509 key features ? 22 db nominal gain @ 30 ghz ? 30 dbm nominal pout @ p1db ? 25% pae @ p1db ? -10 db nominal return loss ? built-in power detector ? 0.25-m mmw phemt 3mi ? bias conditions: vd = 4 - 6 v, idq = 420 ma ? chip dimensions 2.44 mm x 1.15 mm x 0.1 mm (0.096 x 0.045 x 0.004 in) fixtured measured performance bias conditions: vd = 6 v, id =420 ma 10 12 14 16 18 20 22 24 26 28 30 32 -12-9 -6 -3 0 3 6 9 12151821 pin (dbm) pout (dbm) & gain (db) 0 200 400 600 800 1000 ids (ma) gain pout ids data taken @ 30 ghz primary applications ? point to point radio ? point to multi-point radio ? lmds ? satellite ground terminal -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 25 26 27 28 29 30 31 32 33 34 frequency (ghz) sij (db) s21 s11 s22 note: datasheet is subject to change without notice.
triquint semiconductor texas: phone (972)994-8 465 fax (972)994 8504 web: www.triquint.com product data sheet august 5, 2008 2 TGA4509 table ii electrical characteristics (t a = 25 o c, nominal) table i maximum ratings 1/ symbol parameter value notes v + positive supply voltage 7 v v - negative supply voltage range -5 v to 0 v |ig| gate current 35.2 ma i + positive supply current 930 ma 2/, 5 / p d power dissipation tbd p in input continuous wave power 22 dbm t ch operating channel temperature 150 c 3/, 4 / t m mounting temperature (30 seconds) 320 c t stg storage temperature -65 c to 150 c 1/ these values represent the maximum operable values of this device 2/ total current for the entire mmic 3/ these ratings apply to each individual fet 4/ junction operating temperature will di rectly affect the device mean time to failure (mttf). for maximum life it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ the maximum supply current from one si de is 650 ma. from both sides, the maximum supply current is 930 ma. parameter units typical drain operating voltage v 6 quiescent current ma 420 small signal gain @ 30 ghz db 22 gain flatness db/50mhz 0.0660 input return loss (linear small signal) db -10 output return loss (linear small signal) db -10 reverse isolation db -40 cw output power @ p1db dbm 30 power added efficiency @ p1db % 25 p1db temperature coeff. tc (-40 to +85 c) db/deg c 0.0135 triquint semiconductor texas: phone (972)994-8 465 fax (972)994 8504 web: www.triquint.com product data sheet august 5, 2008 3 measured fixtured data bias conditions: vd = 6 v, id = 420 ma 6 8 10 12 14 16 18 20 22 24 26 26 27 28 29 30 31 32 33 34 frequency (ghz) gain (db) -30 -25 -20 -15 -10 -5 0 25 26 27 28 29 30 31 32 33 34 frequency (ghz) return loss (db) s11 s22 TGA4509 triquint semiconductor texas: phone (972)994-8 465 fax (972)994 8504 web: www.triquint.com product data sheet august 5, 2008 4 measured fixtured data bias conditions: vd = 6 v, id = 420 ma 26 27 28 29 30 31 32 27 27.5 28 28.5 29 29.5 30 30.5 31 31.5 32 32.5 33 33.5 frequency (ghz) power (dbm) pout @ p1db (dbm) psat TGA4509 triquint semiconductor texas: phone (972)994-8 465 fax (972)994 8504 web: www.triquint.com product data sheet august 5, 2008 5 notes: 1. connection to power det, ref diode shown. 2. 1 f cap on gate & drain power supplies are lines required. 3. gate voltage can either be from one side or both sides. 4. drain voltage is required from both sides for id > 650 ma. output tfn 100pf 100pf vg 100pf vd vd (optional) 100pf vg (optional) 0.01 f dq cap (opt.) gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. recommended assembly diagram input tfn 0.01 f 0.01 f 0.01 f 0.01 f power detector reference diode TGA4509 triquint semiconductor texas: phone (972)994-8 465 fax (972)994 8504 web: www.triquint.com product data sheet august 5, 2008 6 on-chip diode functions as envelope detector external coupler and dc bias required TGA4509 measured detector voltage offset vs output power with 20db coupler: vb=0.8v, f = 30ghz, coupler loss is uncalibrated, 10k load 0.01 0.1 1 10 8 101214161820222426283032 pout (dbm) detector voltage (v) external coupler (-20db) TGA4509 rf out 50 external dc bias video out (v det ) 10k c=2pf TGA4509 triquint semiconductor texas: phone (972)994-8 465 fax (972)994 8504 web: www.triquint.com product data sheet august 5, 2008 7 mechanical drawing gaas mmic devices are susceptible to damage from el ectrostatic discharge. pr oper precautions should be observed during handling, assembly and test. TGA4509 triquint semiconductor texas: phone (972)994-8 465 fax (972)994 8504 web: www.triquint.com product data sheet august 5, 2008 8 assembly process notes gaas mmic devices are susceptible to damage from el ectrostatic discharge. pr oper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 sec. ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. ? maximum stage temperature is 200 c. 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